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机译:缺陷对SiC石墨化的影响
Department of Materials Science and Engineering, Cankaya University, Ankara, Turkey;
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332;
Department of Materials Science and Engineering, A.J. Drexel Nanotechnology Institute, Philadelphia,Pennsylvania 19104;
Department of Materials Science and Engineering, A.J. Drexel Nanotechnology Institute, Philadelphia,Pennsylvania 19104;
机译:石墨和SiC添加到Cu和SiC粒度对Cu-Graphite-SiC MMC制备粉末冶金的影响
机译:通过热退火从硅沉积的石墨中生长的无缺陷SiC纳米线:取决于温度的核形成和纳米线的生长行为
机译:石墨/ P-SiC肖特基二极管通过将绘制的石墨膜转移到SiC上
机译:通过4H和6H多型,通过电子顺磁共振光谱(EPR)研究了SiC / SiO_2中的界面和氧化物缺陷。在干氧中1000°C炉氧化产生的两个顺磁缺陷
机译:用深层瞬态光谱法(DLTS)表征4H-SiC的缺陷及其对器件性能的影响
机译:石墨层对MgO / 6H-SiC(0001)界面电子性质的影响
机译:对Al 7075-SiC-石墨杂交金属基复合材料的机械和摩擦学性能的石墨效应研究
机译:siC衬底上生长的外延3C-siC,4H-siC和6H-siC薄膜缺陷的研究