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首页> 外文期刊>Journal of magnetism and magnetic materials >Magnetoresistive properties of a double magnetic molecule spin valve in different geometrical arrangements
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Magnetoresistive properties of a double magnetic molecule spin valve in different geometrical arrangements

机译:双磁分子自旋阀在不同几何排列中的磁阻特性

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摘要

Spin-dependent transport through a spin valve consisting of two large-spin molecules, such as single molecular magnets, weakly coupled to external ferromagnetic electrodes is theoretically studied. The main focus is on the dependence of the tunneling current, its spin polarization, differential conductance and tunnel magnetoresistance on the arrangement of molecules embedded in the tunnel junction. These quantities are calculated by using the real-time diagrammatic technique in the lowest-order perturbation theory with respect to the coupling strength. When the molecules' geometry is parallel, both an enhanced as well as inverse tunnel magnetoresistance can develop depending on the molecule's occupation. On the other hand, if the two molecules form a serial geometry, a strong current-suppression occurs due to the Pauli spin blockade effect, resulting in negative differential conductance. In this transport regime we also find large tunnel magnetoresistance, which now exhibits strong asymmetry with respect to the bias voltage reversal. In addition, we show that an enhanced magnetoresistance and negative differential conductance can develop when a T-shaped molecular geometry is taken under consideration. These effects are explained by invoking particular occupation of molecular states and nonequilibrium spin accumulation that builds up in the case of the antiparallel magnetic configuration of the device.
机译:从理论上研究了通过自旋阀的自旋依赖性传输,该自旋阀由两个弱耦合到外部铁磁电极的大自旋分子(例如单分子磁体)组成。主要关注于隧道电流,其自旋极化,微分电导和隧道磁阻对嵌入在隧道结中的分子排列的依赖性。通过使用最低阶扰动理论中的实时图表技术,就耦合强度计算出这些量。当分子的几何形状平行时,取决于分子的占有率,既可以产生增强的隧道磁阻,也可以产生逆隧道磁阻。另一方面,如果两个分子形成连续的几何形状,则由于泡利自旋阻断效应会产生强烈的电流抑制,从而导致负电导差。在这种传输方式下,我们还发现了较大的隧道磁阻,该电阻相对于偏置电压反转表现出很强的不对称性。此外,我们表明,当考虑到T形分子的几何形状时,可以形成增强的磁阻和负微分电导。通过调用特定的分子态占据和非平衡自旋积累来解释这些影响,这种积累在设备的反平行磁配置情况下会建立。

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