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Size and shape dependence study of magnetization reversal in magnetic antidot lattice arrays

机译:磁性解毒点阵阵列中磁化反转的尺寸和形状依赖性研究

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摘要

Magnetic Antidot Lattice (MAL) arrays of Co have been prepared in micron range using ultraviolet (UV) lithography technique with different shapes and sizes. Magnetization reversal in such MAL systems has been studied by magneto-optic Kerr effect (MOKE) based microscopy by varying the angle between the easy axis and the external magnetic field. The domain images evidence that the magnetization reversal along easy axis is highly dominated by nucleation of domains which is subsequently accompanied by domain wall motion. We have observed that with increase in active magnetic area domain size increases but on the contrary coercivity decreases. The presence of periodic holes turns the MALs magnetically hard when compared to similar thickness of continuous thin film. The magnetization relaxation along easy axis for the Co MAL at constant dc field fits very well with the exponential law of Fatuzzo-Labrune indicating domain nucleated dominant process.
机译:使用紫外线(UV)光刻技术已在微米范围内制备了具有不同形状和尺寸的Co磁性Antidot点阵(MAL)阵列。已经通过基于磁光克尔效应(MOKE)的显微镜通过改变易轴与外部磁场之间的角度来研究这种MAL系统中的磁化反转。磁畴图像表明,沿易轴的磁化反转在很大程度上由磁畴的形核控制,随后磁畴壁随之运动。我们已经观察到,随着有效磁区的增加,畴尺寸会增加,但矫顽力会下降。与类似厚度的连续薄膜相比,周期性孔的存在使MAL磁性增强。 Co MAL在恒定直流磁场下沿易轴的磁化弛豫与Fatuzzo-Labrune的指数定律非常吻合,后者表明畴有核占优势。

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