Defect-related light emission from processed He-implanted silicon

摘要

Photoluminescence (PL) from He+-implanted Si (Si:He, He+ dose-2 x 10(16) cm(-2), at 150 keV) is related to its microstructure; it has been tuned by processing at 720-1400K under hydrostatic Ar pressure (HP, up to 1.2 GPa). Processing of Si:He at 720 K for 10 h results in an appearance of the D2 and D3 dislocation-related PL lines, these last of the highest intensity. Only the D1 dislocation-related line of intensity increasing with HP has been detected after processing at 920-1070 K. The D1 (of the highest intensity), D2 and D3 PL lines are observed after the treatment at 1270 K. No dislocation-related PL has been detected for Si:He processed at 1400 K. The treatment of Si:He at 720-1270 K under HP makes it possible to produce Si:He of specific microstructure resulting in strong PL at 0.81, 0.87 or 0.94 eV. (c) 2006 Elsevier B.V. All rights reserved.