Postfabrication Trimming of CMOS-Compatible Athermal MZI by Thermal Annealing

摘要

CMOS-compatible athermal MZI is postfabrication trimmed in wavelength from −0.15 to −5.15 nm using thermal annealing process from 400 to 530 °C. The MZI filter shows temperature dependence less than 2 pm/°C and the temperature dependence is maintained after the annealing process.