Design, fabrication, and characterization of deep-etched waveguide gratings

摘要

One-dimensional (1-D) deep-etched gratings on a specially grown AlGaAs wafer were designed and fabricated. The gratings were fabricated using state-of-the-art electron beam lithography and high-aspect-ratio reactive ion etching (RIE) in order to achieve the required narrow deep air slots with good accuracy and reproducibility. Since remarkable etch depths (up to 1.5 /spl mu/m), which completely cut through the waveguide core layer, have been attained, gratings composed of only five periods (and, thus, shorter than 6 /spl mu/m) have a bandgap larger than 100 nm. A defect was introduced by increasing the width of the central semiconductor tooth to create microcavities that exhibit a narrow transmission peak (less than 7 nm) around the wavelength of 1530 nm. The transmission spectra between 1460 and 1580 nm have been systematically measured, and the losses have been estimated for a set of gratings, both with and without a defect, for different periods and air slot dimensions. Numerical results obtained via a bidirectional beam propagation code allowed the evaluation of transmissivity, reflectivity, and diffraction losses. By comparing experimental results with the authors' numerical findings, a clear picture of the role of the grating's geometric parameters in determining its spectral features and diffractive losses is illustrated.