Groove-Coupled InGaAs/GaAs Quantum Dot Laser/Waveguide on Silicon

摘要

We demonstrate a monolithically integrated laser–waveguide device implemented with InGaAs/GaAs quantum dot heterostructures grown on silicon by molecular beam epitaxy. Focused-ion-beam (FIB) etching is utilized to form high-quality laser mirrors for feedback and grooves for coupling and electrical isolation. Based on a transmission matrix and a generalized beam propagation approach in terms of intensity moments and Gouy phase shifts, a self-consistent model is developed to estimate the reflectivity and coupling coefficient at etched grooves and optimize these parameters for real devices. High-quality FIB-etched facets with a reflectivity of $Rsim 0.28$ and efficient coupling with coupling coefficients of up to 30% for well-defined grooves have been achieved.