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首页> 外文期刊>Lightwave Technology, Journal of >Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector
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Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector

机译:AlN / AlGaN分布式布拉格反射器增强GaN基光子晶体的发光

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In this study, we demonstrated two-dimensional (2-D) photonic crystal band-edge coupling operation in the ultraviolet wavelength range. The light extraction enhancement was obtained from the photonic crystal structure with an ultraviolet AlN/AlGaN distributed Bragg reflector (UVDBR). The DBR provides a high reflectivity of 85% with 15-nm stopband width. A fivefold enhancement in photoluminescence emission was also achieved compared with the emission from the unpatterned area on the same sample at 374 nm wavelength. We also study the photonic crystal bandedge coupling with finite-difference time-domain and plane-wave expansion methods.
机译:在这项研究中,我们证明了在紫外线波长范围内的二维(2-D)光子晶体带边缘耦合操作。利用紫外AlN / AlGaN分布布拉格反射器(UVDBR)从光子晶体结构获得了光提取增强。 DBR具有15nm的阻带宽度,可提供85%的高反射率。与来自相同样品在374 nm波长的未图案化区域的发射相比,光致发光发射也实现了五倍的增强。我们还研究了光子晶体带边耦合的有限差分时域和平面波扩展方法。

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