Thermal Effects on Vertical Cavity Surface Emitting Lasers

摘要

The temperature distribution along the cavity is determined by the heat generation and temperature transport properties of the layer geometry. The heat generation in cavity is generally by following the mechanisms; free carrier absorption, spontaneous and stimulated emission, ohmic heating of carriers during transport through the device, hot carrier effects in the quantum wells and non radiative recombination of electron and holes in the active region. The heat generated in normally transported through the device to heat sink, from which it is delivered to the ambient via conduction, convection and radiation. Depending on device structure the heat sink is mounted below the substrate or on the top of the P mirror. The vertical oriented structure will have comparatively less heat generation.