Temperature Dependence of Device Constant (n) in Junction Diodes

摘要

Temperature dependence of the device constant (n) of junction Mode is experimentally measured. It has been found that it varies linearly with temperature. Experiment has been performed on different types of LEDs and a low leakage silicon diode. It has been shown that the percentage difference in n for all diodes is within 5%, for temperature range 223K to 443K. The constant value of E_g is obtained by the temperature dependent relationship of the reverse saturation current by which E_g value of the device can be estimated. This may find applications in the design of logarithmic electrometer, thermometer design etc.