This study investigates the effect of temperature on the emission frequency of an intrinsic Josephson junction terahertz (THz) electromagnetic wave source, which can be used for high-speed communications by THz carrier wave. The characteristic emission features of two device types (asymmetric and symmetric) and two bias regimes (low and high) were determined. The bias-dependent emission frequency was temperature dependent in the asymmetric device, most likely reflecting the temperature-dependent London penetration depth. The bias tunability of the emission frequency can be explained by device self-heating, which significantly and inhomogeneously raises the temperatures of the device from its bath temperature. These findings are consistent with previous studies of temperature distribution in these devices.
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