Carbon Nanotube Based Interconnects for VLSI Application

摘要

Aggressive technology scaling in the field of VLSI is the result of increase in line resistance of the copper interconnects. This in turn, increases interconnect delay. As the present trend is likely to continue in future, it is of utmost importance to find an alternative to copperas interconnect material. Research activities in this direction shows that metallic carbon nanotube (CNT) is a potential candidate for next generation of interconnect. This paper reviews various works that focused on the prospects of CNT as an interconnect material of future.