We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.
展开▼
机译:我们报告了碳纳米管(CNT)CVD材料技术及其用于VLSI的互连和FET的应用的现状及其应用。我们成功地使用最高的壳体密度(高达10 13 sup> / cm 2 sup>)以及通过互连的互连来制造高电流密度。我们还通过利用由栅极氧化物引入的固定电荷来报告SI-Process兼容的技术来控制单壁CNT(SWNT)FET的载波极性。已经实现了高性能P-和N型CNT-FET和具有稳定性的CMOS逆变器。
展开▼