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A Role for the SO Transmembrane Segment in Voltage-dependent Gating of BK Channels

机译:SO跨膜段在BK通道的电压依赖性门控中的作用

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BK (Maxi-K) channel activity is allosterically regulated by a Ca~(2+) sensor, formed primarily by the channel's large cytoplasmic carboxyl tail segment, and a voltage sensor, formed by its transmembrane helices. As with other voltage-gated K channels, voltage sensing in the BK channel is accomplished through interactions of the S1-S4 transmembrane segments with the electric field. However, the BK channel is unique in that it contains an additional amino-terminal transmembrane segment, SO, which is important in the functional interaction between BK channel α and β subunits. In this study, we used perturbation mutagenesis to analyze the role of SO in channel gating. Single residues in the SO region of the BK channel were substituted with tryptophan to give a large change in side chain volume; native tryptophans in SO were substituted with alanine. The effects of the mutations on voltage- and Ca~(2+)-dependent gating were quantified using patch-clamp electrophysiology. Three of the SO mutants (F25W, L26W, and S29W) showed especially large shifts in their conductance-voltage (G-V) relations along the voltage axis compared to wild type. The G-V shifts for these mutants persisted at nominally 0 Ca~(2+), suggesting that these effects cannot arise simply from altered Ca~(2+) sensitivity. The basal open probabilities for these mutants at hyperpolarized voltages (where voltage sensor activation is minimal) were similar to wild type, suggesting that these mutations may primarily perturb voltage sensor function. Further analysis using the dual allosteric model for BK channel gating showed that the major effects of the F25W, L26W, and S29W mutations could be accounted for primarily by decreasing the equilibrium constant for voltage sensor movement. We conclude that SO may make functional contact with other transmembrane regions of the BK channel to modulate the equilibrium between resting and active states of the channel's voltage sensor.
机译:BK(Maxi-K)通道的活动受Ca〜(2+)传感器的变构调节,该传感器主要由通道的大细胞质羧基尾部片段形成,而电压传感器则由其跨膜螺旋形成。与其他电压门控K通道一样,BK通道中的电压感测通过S1-S4跨膜片段与电场的相互作用来完成。但是,BK通道的独特之处在于它包含一个额外的氨基末端跨膜片段SO,这在BK通道α和β亚基之间的功能相互作用中很重要。在这项研究中,我们使用扰动诱变来分析SO在通道门控中的作用。 BK通道的SO区中的单个残基被色氨酸取代,从而使侧链体积发生了很大变化。 SO中的天然色氨酸被丙氨酸取代。突变对电压和Ca〜(2+)依赖性门控的影响使用膜片钳电生理学定量。与野生型相比,三个SO突变体(F25W,L26W和S29W)沿电压轴的电导-电压(G-V)关系显示出特别大的变化。这些突变体的G-V位移在名义上为0 Ca〜(2+)时持续存在,表明这些效应不能简单地由改变的Ca〜(2+)敏感性引起。这些突变体在超极化电压(其中电压传感器激活作用最小)下的基础开放概率与野生型相似,表明这些突变可能主要扰乱了电压传感器的功能。使用双变构模型对BK通道门控进行的进一步分析表明,F25W,L26W和S29W突变的主要影响可能主要是通过降低电压传感器运动的平衡常数来解决的。我们得出的结论是,SO可能与BK通道的其他跨膜区域发生功能性接触,以调节通道电压传感器的静止状态和活动状态之间的平衡。

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