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首页> 外文期刊>Journal of the European Ceramic Society >Low-Temperature Oxidation of Silicon Nitride by Water in Supercritical Condition
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Low-Temperature Oxidation of Silicon Nitride by Water in Supercritical Condition

机译:水在超临界条件下的低温氧化氮化硅

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Oxidation tests carried out in supercritical water (400-500℃) revealed a noticeable corrosion attack on the silicon nitride surface in spite of the low temperatures. Increasing water pressure generally caused an increase in the oxidation phenomena. Oxidation scale evolution depended strictly on the silicon nitride sintering process, sintering aids, porosity and impurities, which influenced oxidation kinetics and surface morphology. In such test conditions the solubility of silica in water seemed to have a great influence on the stability of the oxidation scale, mainly in reaction-bonded silicon nitride samples.
机译:在超临界水(400-500℃)中进行的氧化测试表明,尽管温度较低,但氮化硅表面仍受到明显腐蚀。水压的升高通常引起氧化现象的增加。氧化皮的演变严格取决于氮化硅的烧结过程,烧结助剂,孔隙率和杂质,这些因素影响了氧化动力学和表面形态。在这样的测试条件下,二氧化硅在水中的溶解度似乎对氧化皮的稳定性有很大影响,主要是在反应结合的氮化硅样品中。

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