机译:设计参数对硅通孔硅中热机械应力的影响
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South Korea;
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South Korea;
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South Korea;
through-silicon vias; thermomechanical stress; finite element analysis; design parameter; silicon cracking;
机译:使用同步加速器X射线微衍射,电子背散射衍射和非线性热力学模型表征铜直通硅通孔结构中的局部应变/应力
机译:通过CMOS传感器和有限元方法研究3-D IC中TSV中间层(硅通孔)引起的热机械应力
机译:基于热力学建模的三维IC中硅通孔阵列的表征与设计
机译:3D互连中的硅通孔的热机械可靠性
机译:对3D集成电路中通过硅通孔的热应力和可靠性的缩放和微观结构效应
机译:穿透硅过孔中W薄膜中应力振荡的X射线纳米衍射分析
机译:拉曼光谱和模拟升高温度下硅通孔硅近表面应力研究