Metalorganic Vapor Phase Epitaxial Growth of GaInAsP/GaAs

摘要

Ga_xIn_(1-x)As_yP_(1-y) lattice matched to GaAs has been grown by low pressure metalorganic phase vapor epitaxy over the entire compositional range. At T_G = 670℃ broad peaks of low intensity are observed in the 10K photoluminescence for y = 0.2-0.4 due to the predicted miscibility gap in this compositional region. An increase in growth temperature leads to a smaller miscibility gap. The band gap as well as the morphology show a strong dependence on substrate misorientation. The smoothest GaInAsP surfaces are obtained on exact oriented substrates. For the ternary GaInP the surface roughness is correlated to the degree of ordering in the temperature range of 600 to 750℃. The smallest band gap together with the smoothest surface is obtained on (100) 2° off to (111)B. Ordering effects are also observed in the quaternary GalnAsP. Broad-area lasers processed from the grown layers show high slope efficiency (0.9 W/A) and low internal losses ( < 3 cm~(-1)).