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机译:同时形成n型和p型4H-SiC的Ni / Al欧姆接触
Department of Materials Science and Engineering Kyoto University Kyoto 606-8501 Japan;
Department of Materials Science and Engineering Kyoto University Kyoto 606-8501 Japan;
Department of Materials Science and Engineering Kyoto University Kyoto 606-8501 Japan;
Department of Materials Science and Engineering Kyoto University Kyoto 606-8501 Japan;
Department of Materials Science and Engineering Kyoto University Kyoto 606-8501 Japan;
Nanotechnology Products Business Group Hitachi High-Technologies Corporation Ibaraki-ken 312-0057 Japan;
Nanotechnology Products Business Group Hitachi High-Technologies Corporation Ibaraki-ken 312-0057 Japan;
Department of Materials Science and Engineering Kyoto University Kyoto 606-8501 Japan;
Ni/Al; ohmic contacts; simultaneous formation; 4H-SiC;
机译:同时形成n型和p型4H-SiC的Ni / Al欧姆接触
机译:NI / W / NI欧姆欧姆触点,用于N-和P型4H-SIC
机译:降低退火温度对n型和p型4H-SiC的Ni / Al欧姆接触的影响
机译:使用二元Ni / Al系统同时形成4H-SiC的n型和p型欧姆接触
机译:镍/金和钯/金欧姆接触与清洁的p型氮化镓(0001)表面之间形成的界面的电,化学和结构表征。
机译:在不同的注入后退火后p型铝注入的4H-SiC层上的欧姆接触
机译:Ni / Ti / Al欧姆触点的电气特性与Al植入的P型4H-SiC