...
机译:使用InGaN:Mg / GaN:Mg超晶格作为p型空穴注入和接触层的绿色发光二极管的特性
Center for Compound Semiconductors and School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr. NW Atlanta GA 30332-0250 USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr. NW Atlanta GA 30332-0250 USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr. NW Atlanta GA 30332-0250 USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr. NW Atlanta GA 30332-0250 USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr. NW Atlanta GA 30332-0250 USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr. NW Atlanta GA 30332-0250 USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr. NW Atlanta GA 30332-0250 USA;
Light-emitting diode (LED); gallium nitride (GaN); metalorganic chemical vapor deposition (MOCVD); InGaN; green LED;
机译:使用InGaN:Mg / GaN:Mg超晶格作为p型空穴注入和接触层的绿色发光二极管的特性
机译:通过插入n〜+ -InGaN电子注入层和p-InGaN / GaN空穴注入层来改善InGaN / GaN MQWs发光二极管的静电放电特性
机译:GaN-Ingan-GaN屏障的起源在增强InGaN / GaN绿色发光二极管的空穴注射中
机译:使用p-InGaN和p-InGaN / p-GaN超晶格作为p型层的InGaN MQW绿色LED
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:渐变铟组合物P型Ingan层的甘油基绿光二极管量子效率提高