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Mitigative Tin Whisker Growth Under Mechanically Applied Tensile Stress

机译:机械施加的拉伸应力下锡晶须的缓解生长

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摘要

Sn whisker/hillock growth is a result of the release of compressive stress in a Sn thin film. Filamentary Sn whiskers were formed on an electrodeposited Sn thin film aged at room temperature, while Sn hillocks were formed as the aging temperature was raised to 80°C and 150°C. By mechanically applying a tensile stress on the Sn thin film, the growth of the Sn whisker/hillock was significantly mitigated. This mitigation growth suggests that part of the compressive stress in the Sn thin film was neutralized by the mechanically applied tensile stress.
机译:Sn晶须/小丘的生长是Sn薄膜中压应力释放的结果。在室温下老化的电沉积Sn薄膜上形成丝状Sn晶须,而随着时效温度升高至80°C和150°C,形成Sn小丘。通过在Sn薄膜上机械施加拉伸应力,Sn晶须/小丘的生长得到显着缓解。这种缓解的增长表明,Sn薄膜中的部分压应力已通过机械施加的拉应力中和。

著录项

  • 来源
    《Journal of Electronic Materials》 |2009年第3期|p.415-419|共5页
  • 作者

    Yu-jen Chen; Chih-ming Chen;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 00:04:47

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