Sn whisker/hillock growth is a result of the release of compressive stress in a Sn thin film. Filamentary Sn whiskers were formed on an electrodeposited Sn thin film aged at room temperature, while Sn hillocks were formed as the aging temperature was raised to 80°C and 150°C. By mechanically applying a tensile stress on the Sn thin film, the growth of the Sn whisker/hillock was significantly mitigated. This mitigation growth suggests that part of the compressive stress in the Sn thin film was neutralized by the mechanically applied tensile stress.
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