Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

摘要

By using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques, we characterized the electrical and optical properties of stacking faults (SFs) in 4H-SiC p +/−n junctions and compared with those in Schottky diodes. In the EBIC images, SFs penetrating the p +/−n junction are bright in the n − region and dark in the p + region, while SFs observed in the Schottky diode are only bright. In CL measurements, a characteristic peak (417 nm) appears at SFs in the n − region, similar to those observed in Schottky diodes. The 417-nm peak, however, does not occur obviously at either the p + layer or within the depletion region. The reason for the absence of this emission is discussed in terms of band bending at the junction.