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首页> 外文期刊>Journal of Electronic Materials >Microstructure and Microwave Dielectric Properties nof Ba3.75Nd9.5Ti18−zn (Mg1/3Nb2/3)n zn O54 Ceramics
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Microstructure and Microwave Dielectric Properties nof Ba3.75Nd9.5Ti18−zn (Mg1/3Nb2/3)n zn O54 Ceramics

机译:Ba3.75Nd9.5Ti18-zn(Mg1 / 3Nb2 / 3)n zn O54陶瓷的微观结构和微波介电性能

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摘要

The effects of magnesium and niobium substitution for titanium on the microwave dielectric properties of Ba3.75Nd9.5Ti18−z (Mg1/3Nb2/3) z O54 (0 ≤ z≤ 3) ceramics were studied. The temperature coefficient of resonant frequency (τ f ) decreased from about +60 ppm/°C to +17 ppm/°C when z ≤ 1. Excellent quality factor (Qf = 7300 GHz) as well as high dielectric constant (ε r = 80.96) were obtained. For z ≥ 1.5, Nd2(Ti,Mg,Nb)2O7 secondary phase appeared which would obviously influence the microwave dielectric properties. As z varied from 0 to 3, matrix grain size degraded which would obviously deteriorate the microwave dielectric properties by conducting more pores, especially the Qf value. The τ f value was found to be related to b-site bond valence (V B-O) and unit cell volume (V m). Average ionic polarizability (α D) and relative density evidently influenced the dielectric constant.
机译:研究了镁和铌替代钛对Ba3.75Nd9.5Ti18-z(Mg1 / 3Nb2 / 3)z O54(0≤z≤3)陶瓷的微波介电性能的影响。当z≤1时,谐振频率的温度系数(τf)从大约+60 ppm /°C降至+17 ppm /°C。优良的品质因数(Qf = 7300 GHz)和高介电常数(εr = 80.96)。对于z≥1.5,出现Nd2(Ti,Mg,Nb)2O7第二相,这显然会影响微波介电性能。当z从0变为3时,基体晶粒尺寸降低,这会通过传导更多的孔尤其是Qf值而明显降低微波介电性能。发现τf值与b位键合价(V B-O)和单位细胞体积(V m)有关。平均离子极化率(αD)和相对密度明显影响介电常数。

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  • 来源
    《Journal of Electronic Materials》 |2015年第4期|1081-1087|共7页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China">(1);

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China">(1);

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China">(1);

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China">(1);

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China">(1);

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China">(1);

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China">(1);

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Microwave dielectric properties; bond valence; substitution; microstructure;

    机译:微波介电性能;键价代换;微观结构;

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