Uniform growth of high-quality 2-in diameter In_0.53Ga_0.47As/ In_0.52Al_0.48As/InP and In_0.2Ga_0.8As/GaAs/AlGaAs multi-quantum well wafers by MBE with GaP and GaAs decomposition sources

摘要

Uniform In_0.53Ga_0.47As/In_0.52Al_0.48As/InP multi-quantum well (MQW) and In_0.2Ga_0.8As/GaAs/AlGaAs graded- index separated-confinement double QW wafers have been grown by molecular beam epitaxy (MBE) with GaP and GaAs decomposition sources using indium-free holder on 2-in substrate. This was achieved by uniform temperature distribution, which was obtained by the introduction of a thermally shielded substrate manipulator; a stable DC power supply; a highly conductive silicon back plate; and a uniform distribution of arsenic dimer on substrate by GaAs decomposition source. For InGaAs/InAlAs MQWs grown by MBE, the uniformity (standard deviation) was measured by scanning photoluminescence (PL) taken at T=300K, and was found to be 1538±1.2nm.