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首页> 外文期刊>Journal of Crystal Growth >Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(l00) substrates
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Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(l00) substrates

机译:孪生结构对在GaAs(100)衬底上MOCVD生长的CdTe(111)层形貌的影响

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The morphology and structure of CdTe(l 1 1) layers grown on GaAs(100) by MOCVD have been studied by atomic force microscopy (AFM) and X-ray texture analysis. Growth conditions have been chosen so that mirror-like CdTe layers are obtained. Layers whose growth times vary between 10s and 2h have been investigated. The X-ray texture analysis shows that the CdTe layers grown on GaAs substrates that were thermally treated at 580℃ for 30 min in a H_2 atmosphere exhibit a (111) preferential orientation and are twinned. This twinned structure of the (11 l)CdTe layer which is observed as 60° rotated triangular crystallites in the AFM images strongly influences the surface morphology. The AFM results have been interpreted using a dynamic scaling theory. The occurrence of a 2D-3D growth transition has been detected after periods of growth in the range of 100-300 s.
机译:通过原子力显微镜(AFM)和X射线织构分析研究了通过MOCVD法在GaAs(100)上生长的CdTe(11 1)层的形貌和结构。选择生长条件以便获得镜面状的CdTe层。已经研究了生长时间在10s和2h之间变化的层。 X射线织构分析表明,生长在GaAs衬底上的CdTe层在H_2气氛中在580℃下热处理30分钟,表现出(111)优先取向并成对。 (11 l)CdTe层的这种孪生结构在AFM图像中观察为60°旋转的三角形微晶,对表面形态有很大影响。 AFM结果已使用动态缩放理论进行了解释。在100-300 s范围内的生长周期后,已经检测到2D-3D生长过渡的发生。

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