Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

摘要

Reflectance and reflectance anisotropy spectroscopy (RAS) was applied to monitor the MOVPE growth of InGaAsP/ InP layers in situ. The basic relationship between the measured optical in situ data and n(Si)- and p(Zn)-doping concentrations of InP, InGaAs and InGaAsP were investigated. Among these materials, InP showed the lowest doping detection limit. Changes in the composition of InGaAsP could be resolved by RAS and reflectance measurements even in the range of a few atomic percent. Combining reflectance and RAS, characteristic fingerprints of all growth steps of a complete 1.3 μm MQW laser structure were generated.