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首页> 外文期刊>Journal of Crystal Growth >Organometallic chemical vapor deposition of V-groove InGaAs/GaAs quantum wires incorporated in planar Bragg microcavities
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Organometallic chemical vapor deposition of V-groove InGaAs/GaAs quantum wires incorporated in planar Bragg microcavities

机译:纳入平面Bragg微腔中的V槽InGaAs / GaAs量子线的有机金属化学气相沉积

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摘要

We report the fabrication and the opitcal propertis of dense arrays of strained InGaAs/GaAs V-groove quantum wires (QWRs) embedded in wavelength size planar Bragg microcavities, made using a two-step organometallic chemical vapor deposition (OMCVD). Growth front evolution and top surface morphology of GaAs on the corrugated substrate were investigated as a function of the growth temperature (550-625 deg C) and the pitch of the V-groove grating (3-0.25 um).
机译:我们报告了使用两步有机金属化学气相沉积(OMCVD)制成的InGaAs / GaAs V形沟槽量子线(QWR)的密集阵列的制造及其光学特性,该阵列嵌入在波长大小的平面Bragg微腔中。考察了波纹衬底上GaAs的生长前沿演化和顶面形貌与生长温度(550-625℃)和V型槽光栅的间距(3-0.25 um)的关系。

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