InGaN-based blue light-emitting diodes and laser diodes

摘要

InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grwon on epitaxially8 laterally overgrown GaN (ELOG) and sapphirelk subsrates. The emission spectra showed a similar blueshift with increasing forward currents between both LEDs. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. InGaN multi-quantum-well strucutre laser diodes iwht modulation-doped strained-layer superlattice cladding layers fabricated on the ELOG substrate were demosntrated to have a lifetime of more than 8000 h.