Gas source MBE growth and characterization of TlInGaP and TlGaAskkkk layers for ling wavelength applications

摘要

New III-V semiconductors TlInGaP and TlInGaAs (Tl composition of less than 0.1) are grown on InPk substrates by gas soruce molecualr beam epitaxy. They are proposed for long wavelength optical devices as well as temeprature insenwsitive wavelength laser diodes. Grown layers are characterized by the measurements on the temeprature variation of photoconductance and phtoluminescence. It is observed that the bandgap energy shows small-temeprature variation suggestign the existence of temeprature-independent bandgap energy in these material systems for the laeyrs with increased Tl composition.