Strongl band gap narrowing in quasi-binary (GaSb)_1-x(InAs)_x crystals grown from melt

摘要

Large crystals of a quays-binary semiconductor alloy (gabs)_1-x(ins)_x with x=0.02-0.05 have been grown from melt for he first time. The family of quasi-binary crystals (gabs)_1-x(ins)_x grown and reported here are different from the conventional Ga_1-xIn_xAs_ySb_1-y quaternaries due to grown behavior and physical properties. Significant narrowing of the band gap was observed in these crystals compared to the conventional quaternary Ga_1-xIn_xAs_ySb_1-y (with x=y). With an InAs content of about 2-5 at /100, band gaps in the range of 0.6-0.65 eV have been demonstrated. The possible origins of the band gap narrowing (i.e., high bowing parameter) include chemical and structural alterations in the grown crystals, resulting from the association of Ga-Sb and In-As in the melt.