Growth of CdZnTe single crystals for radiation detectors

摘要

A new growth technique of CdZnTe single crystals for room-temperature radiation detectors is developed. It is based on a free growth from the vapour phase on a oriented single crystal seed. Binary polycrystalline CdTe and ZnTe compounds are placed and heated separately to produce divided flows whcih were introduced into the crystal grwoth zone where they mixed before deposition on the seed. Monocrystalline and homogeneous materials with high electrical resistivity, low defect density, and crystal volume up to ～50 cm~3 are prepared by this technique.