Growth of CdZnTe single crystals for radiation detectors

摘要

A new growth technique of CdZnTe single crystals for room-temperature radiation detectors is developed. It is based on a free growth from the vapour phase on a oriented single crystal seed. binary polycrystalline CdTe and ZnTe compounds are placed and heated separately to produce divided flows which were introduced into the crystal growth zone where they mixed before deposition on the seed. Monocrystalline and homogeneous materials with hihg electrical resistivity, low defect density, and crystal volume up to approx 50 cm~3 are prepared by this techniqeu. direct c 1999 Elsevier Science B.V. All rights reserved.