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GaN nanorings: Another example of spontaneous polarization-induced nanostructure

机译:GaN纳米环:自发极化诱导纳米结构的另一个示例

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摘要

Single-crystal GaN nanorings were synthesized by a vapor-solid process. The detailed morphological and crystallographic characterizations of these GaN nanorings were carried out to reveal their formation mechanism. The results presented here demonstrate that the formation of GaN nanorings can be explained by the self-bending of nanobelts due to the surface spontaneous polarization. GaN nanoring is another example of spontaneous polarization-induced nanostructure.
机译:GaN纳米单晶环通过气固法合成。对这些GaN纳米环进行了详细的形态和晶体学表征,以揭示其形成机理。此处给出的结果表明,由于表面自发极化,纳米带的自弯曲可以解释GaN纳米环的形成。 GaN纳米环是自发极化诱导纳米结构的另一个示例。

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