机译:GaN / InGaN / GaN异质结中的极化感应齐纳隧道二极管
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA,Departments of ECE and MSE, Cornell University, Ithaca, New York 14853, USA;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA,Departments of ECE and MSE, Cornell University, Ithaca, New York 14853, USA;
机译:使用ITO / n〜+ -InGaN / InGaN超晶格/ n〜+ -GaN / p-GaN隧道结的高亮度GaN基发光二极管
机译:使用ITO / n(+)-InGaN / InGaN超晶格/ n(+)-GaN / p-GaN隧道结的高亮度GaN基发光二极管
机译:具有掩埋极化感应隧穿结的n-ZnO / p-GaN异质结发光二极管
机译:高亮度GaN的发光二极管使用ITO / n〜+ -ingan / Ingan Superlattice / n〜+ -gan / p-gaN隧道junctio
机译:InGaN / GaN发光二极管热性能的调查分析
机译:从硅衬底上分离出来的独立式GaN上的InGaN / GaN蓝色发光二极管的正向隧穿特性研究
机译:GaN / InGaN / GaN中的偏振诱导齐纳隧道二极管 异质结
机译:用于激光二极管应用的GaN,InGaN和GaN / InGaN量子阱结构的mBE生长和性质