Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substrates

摘要

We have used photoreflectance (PR) and photoluminescence (PL) measurements to characterize the optical properties of a series of strained In_xGa_(1-x)As_(1-y)N_y thin films (x～20%, y～3%) grown by molecular beam epitaxy (MBE) on different GaAs substrates with the following surface orientations: (100), (511)A, (411)A, (311)A, and (111)A. The aim of our work is to investigate the effect of substrate orientation on the optical emission of (In, Ga)(As, N). Our results indicate that the growth direction affects the crystal quality, the N incorporation, and the optical properties of the films.