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Microstructural investigation of 3C-SiC islands grown by VLS mechanism on 6H-SiC substrate

机译:通过VLS机理在6H-SiC衬底上生长的3C-SiC岛的显微组织研究

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摘要

Trying to understand how 3C-SiC polytype could nucleate on a 6H-SiC (0001) surface from a liquid phase, the initial stage of the vapor-liquid-solid (VLS) growth was studied. It was shown that, after a simple contact of the seed with the Ge_(50)Si_(50) mel
机译:为了了解3C-SiC多晶型如何从液相在6H-SiC(0001)表面成核,研究了气液固(VLS)生长的初始阶段。结果表明,在种子与Ge_(50)Si_(50)的简单接触之后

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