Molecular beam epitaxy of highly antimony doped germanium on silicon

摘要

We investigated the antimony incorporation in germanium at high concentration regime above the maximum equilibrium solid solubility of 1.2 × 10~(19) cm~(-3). As growth method molecular beam epitaxy at temperatures between 160 and 330 "C was used. Electrical active Sb incorporation up to 2 × 10~(20) cm~(-3) was obtained. At higher chemical Sb concentrations up to 6 × 10~(20) cm~(-3) only a fraction of the dopants is electrically active at room temperatures.