机译:相干应变核壳纳米线的平衡应变能分析
Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA;
A1. Stresses; A3. Solid phase epitaxial; B2. Semiconductor materials; B3. Field effect transistors;
机译:应变纳米线异质结构中相干的平衡极限
机译:在相干紧张的[110]的GE-Si核 - 壳体纳米线中提高空穴迁移率
机译:相干应变的Si-SixGe1-x核壳纳米线异质结构
机译:GaAs / GaNAs核-多壳纳米线的晶体结构
机译:狭窄和应变芯/多壳半导体纳米线的光学和结构表征
机译:促进相干应变110取向的空穴迁移率Ge–Si核–壳纳米线
机译:促进相干应变[110]取向的Ge-Si核壳纳米线的空穴迁移率