Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony

摘要

InGaAsSb layers nearly lattice-matched to InP were grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony (TDMASb). Secondary-ion mass spectroscopy measurements revealed that TDMASb is useful not only as an Sb source but also as an additive that reduces the incorporation of C into the film from group-Ill metalorganic sources. In the room-temperature photoluminescence spectrum, the incorporation of Sb into InGaAs shifted the peak wavelength from 1.66 to 1.75μm and, simultaneously, the peak intensity of InGaAsSb became more than twice that of InGaAs.