Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

摘要

Nitride-based metal-semiconductor-metal ultraviolet (UV) photodetectors prepared on Si (111) substrate with stacked buffer layers were proposed and prepared. With 5 V applied bias, it was found that dark current of the fabricated device was only 7.95 × 10~(-12) A. With an applied bias of 10 V, it was found that peak responsivity was 0.06 A/W, corresponding to quantum efficiency of 21.2% while UV/visible rejection ratio was 244. With 5 V applied bias, it was found that noise equivalent power, NEP and detectivity, D*. of our detector were 1.70 × 10~(13)Wand 1.18 × 10~ (13)cmHz~(0.5)W~(-1), respectively.