The role of Sb and N ions on the morphology and localization of (Ga,In) (N,As) quantum wells

摘要

A comparative study of the influence of Sb and N ion concentration on the properties of GalnNAs (GINA) quantum wells (QWs) is presented. We find that for perfect two-dimensional (2D) QW there is no direct perceptible improvement in structural quality due to the introduction of Sb. Moreover, contrast variations in the QW suggest an inhomogeneous Sb incorporation. A different behaviour of the integrated photoluminescence (PL) intensity with temperature is observed when comparing the 2D samples grown with/without Sb. Regarding the GINA QWs exhibiting a three-dimensional (3D) morphology, we observe a significant improvement in structural quality for the samples grown with added Sb, as well as for those Sb-free samples but grown under a low N- ions density. Nevertheless, 2D and 3D samples show clear common properties: the GINA:Sb QWs exhibit an improved PL efficiency, but only at high temperatures. On the contrary, the Sb-free samples grown under a low N- ions concentration exhibit a brighter PL at all temperatures considered.