Formation of Ge-diffusion-suppressed GaAs layers and InAs quantum dots on Ge/Si substrates

摘要

Crystal growth of GaAs layers and InAs quantum dots (QDs) on the GaAs layers was investigated on Ge/ Si substrates using ultrahigh vacuum chemical vapor deposition. Ga-rich GaAs with anti-site Ga atoms grown at a low V/III ratio was found to suppress the diffusion of Ge into GaAs. S-K mode QD formation was observed on GaAs layers grown on Ge/Si substrates with Ga-rich GaAs initial layers, and improved photoluminescence from 1.3 μm-emitting InAs QDs was demonstrated.