机译:等离子体辅助MBE在(010)LiGaO_2上生长A面GaN
Institute for Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany;
Department of Materials Science and Opto-electronic Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC;
Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 763131 Karlsruhe, Germany;
Institute for Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 763131 Karlsruhe, Germany;
Institute for Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany;
A3. Molecular beam epitaxy; B1.GaN; B1. LiGaO_2; B1. Non-polar nitrides;
机译:通过化学气相沉积在(010)LiGaO_2衬底上生长和表征a平面(1120)GaN膜
机译:等离子体辅助MBE在LiGaO_2上生长非极性GaN
机译:等离子体辅助分子束外延在(100)LiGaO_2上生长M面GaN
机译:通过等离子体辅助MBE对Ligao_(2)的M-和A-Plane GaN的生长
机译:等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
机译:等离子体辅助MBE在LiGaO2上生长非极性GaN的微观结构
机译:生长温度对飞机蓝宝石激光MBE种植外延薄GaN薄膜结构和光学性质的影响
机译:化学计量学对等离子体辅助mBE生长在Gaas上立方GaN中缺陷分布的影响