Structural property of m-plane ZnO epitaxial film grown on LaAlO_3 (112) substrate

摘要

The microstructure of m-plane (1010) ZnO grown on LaAlO_3 (112) (LAO (112)) substrate by pulsed laser deposition method has been investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). XRD shows that ZnO grown on LAO(112) appears to be oriented in pure m-plane. TEM electron diffraction patterns in cross section illustrate that m-plane ZnO is in epitaxy with LAO (1 1 2), and the orientation relationships are determined to be [1210]_(ZnO)//[111]_(LAO) and [0001]_(ZnO)// [110]_(LAO). Also, TEM shows that most of threading dislocations (TDs) in a-type are mainly distributed as wiggle-like lines. From the observations in plan-view TEM, the densities of TDs and basal stacking faults are approximately estimated to be 5.1 × 10~(10)cm~(-2) and 4.3 × 10~5 cm~(-1), respectively.