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Controlled c-oriented ZnO nanorod arrays and m-plane ZnO thin film growth on Si substrate by a hydrothermal method

机译:水热法在硅衬底上控制c取向ZnO纳米棒阵列和m平面ZnO薄膜生长

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摘要

Oriented ZnO nanorod arrays and ZnO thin films were simultaneously grown on magnetron sputtered ZnO seed layers through a hydrothermal approach without any metal catalyst. The c-oriented ZnO nanorod arrays were grown on the unannealed ultrathin ZnO seed layer, while the ZnO thin films with (100) preferred orientation were grown on the annealed ultrathin ZnO seed layer. Thermodynamically preferred (002) oriented grain growth will be suppressed by the morphology changes of the ultrathin seed layer while the (100) orientation will preferentially develop instead. Photoluminescence spectroscopy results show that the UV emission peak shifts slightly to shorter wavelength with increasing the annealing temperature of the ultrathin ZnO seed layer.
机译:定向的ZnO纳米棒阵列和ZnO薄膜通过磁控溅射的ZnO种子层通过水热方法同时生长,无需任何金属催化剂。在未退火的超薄ZnO晶种层上生长c取向的ZnO纳米棒阵列,而在退火的超薄ZnO晶种层上生长具有(100)优选取向的ZnO薄膜。热力学上优选的(002)取向的晶粒生长将被超薄种子层的形态变化所抑制,而(100)取向将优先发展。光致发光光谱结果表明,随着超薄ZnO晶种层退火温度的升高,紫外光的发射峰会向较短的波长偏移。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第4期|568-572|共5页
  • 作者单位

    Division of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, the Chinese Academy of Sciences, Ningbo 315201, People's Republic of China;

    rnDivision of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, the Chinese Academy of Sciences, Ningbo 315201, People's Republic of China;

    rnDivision of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, the Chinese Academy of Sciences, Ningbo 315201, People's Republic of China;

    rnDivision of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, the Chinese Academy of Sciences, Ningbo 315201, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Crystal morphology; A1. Crystal structure; A3. Liquid phase epitaxy; B1. Zinc compounds; B2. Semiconducting II-IV materials;

    机译:A1。晶体形态A1。晶体结构A3。液相外延;B1。锌化合物;B2。半导体II-IV材料;
  • 入库时间 2022-08-17 13:19:15

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