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首页> 外文期刊>Journal of Crystal Growth >Nonpolar a-plane GaN films grown on γ-LiA1O_2 (3 0 2) substrates by low-pressure MOCVD
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Nonpolar a-plane GaN films grown on γ-LiA1O_2 (3 0 2) substrates by low-pressure MOCVD

机译：通过低压MOCVD在γ-LiA1O_2（3 0 2）衬底上生长的非极性a面GaN膜

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摘要

A-plane gallium nitride (GaN) layers were grown on γ-LiAlO_2 (3 0 2) by metal-organic chemical vapor deposition (MOCVD). The structural properties of the layers were characterized by high resolution X-ray diffraction (HRXRD). The structural and optical properties of a-plane GaN films are studied. The growth conditions with V/III ratios of 143 and 300 mbar may help produce a-GaN film with high quality and in a more isotropic shape. The polarization ratio of the near band emission of sample A (81.13%) was higher than sample B (54.65%), due to the improved crystallinity.
机译：通过金属有机化学气相沉积（MOCVD）在γ-LiAlO_2（3 0 2）上生长A面氮化镓（GaN）层。层的结构性质通过高分辨率X射线衍射（HRXRD）表征。研究了a面GaN膜的结构和光学性质。 V / III比为143和300 mbar的生长条件可能有助于生产高质量和更各向同性的a-GaN膜。由于改善了结晶度，样品A（81.13％）的近带发射的极化率高于样品B（54.65％）。

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  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.483-487|共5页
  • 作者

    Tingtingjia; Shengming Zhou; Hao Teng; Hui Lin; Xiaorui Hou; Yukun Li; Wenjie Li; Jun Wang; Jianqi Liu; Jun Huang; Kai Huang; Min Zhang; Jianfeng Wang; Ke Xu;

  • 作者单位

    Key Laboratory of Materials Science and Technology for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China;

    Key Laboratory of Materials Science and Technology for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China;

    Key Laboratory of Materials Science and Technology for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China;

    Key Laboratory of Materials Science and Technology for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China;

    Key Laboratory of Materials Science and Technology for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China;

    Key Laboratory of Materials Science and Technology for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China;

    Key Laboratory of Materials Science and Technology for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China;

    Key Laboratory of Materials Science and Technology for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China;

    Graduate School of Chinese Academy of Sciences, Beijing 100049, China Suzhou Institute of Nano-tech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China;

    Graduate School of Chinese Academy of Sciences, Beijing 100049, China Suzhou Institute of Nano-tech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China;

    Suzhou Institute of Nano-tech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China;

    Graduate School of Chinese Academy of Sciences, Beijing 100049, China Suzhou Institute of Nano-tech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China;

    Suzhou Institute of Nano-tech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China;

    Suzhou Institute of Nano-tech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. High resolution X-ray diffraction; A1. Scanning electron microscope; A3. Metal-organic chemical vapor; deposition; B1. GaN; B1. UAlO_2;

    机译：A1。高分辨率X射线衍射;A1。扫描电子显微镜;A3。金属有机化学蒸气;沉积B1。氮化镓;B1。 UAlO_2;

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