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机译:金属有机化学气相沉积法优化InGaAs / InAlAs / InP量子级联激光器的生长条件
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, CA 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, CA 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, CA 30332-0250, USA,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA;
School of Engineering and Applied Sciences, Harvard University, 19 Oxford Street, Cambridge, MA 02138, USA;
School of Engineering and Applied Sciences, Harvard University, 19 Oxford Street, Cambridge, MA 02138, USA;
School of Engineering and Applied Sciences, Harvard University, 19 Oxford Street, Cambridge, MA 02138, USA;
Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USA;
Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USA;
A1. Characterization; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III-V materials; B3. Infrared devices; B3. Laser diodes;
机译:通过金属有机化学气相沉积在用于1.55μm激光的InAlGaAs / InP上生长InAlAs自组装量子点
机译:金属有机化学气相沉积生长的InAs / InGaAsP / InP量子点激光器
机译:金属有机化学气相沉积和1.3μmInGaAsN垂直腔面发射激光器生长的InGaAsN量子阱中的Al污染
机译:通过金属有机化学气相沉积优化垂直堆叠的InP / In / sub 0.5 / Al / sub 0.3 / Ga / sub 0.2 / P量子点的生长
机译:通过金属有机化学气相沉积,铝镓砷镓/镓砷化镓梯度阻隔量子阱异质结构激光
机译:InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
机译:优化IN0.52AL0.48AS的MBE生长条件为INGAAS / INALAS / INP量子级联激光器的波导层