机译:基于二维成核理论的SiC PVT生长过程中多型稳定性的热力学分析
Department of Aeronautics and Astronautics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan;
Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;
Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;
Department of Aeronautics and Astronautics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan,Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;
Department of Aeronautics and Astronautics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan,Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;
A1. Computer simulation; A1. Nucleation; A2. Growth from vapor; B2. Semiconducting silicon compounds;
机译:使用二维成核理论在总压力控制下PVT SiC的生长以确保多型性
机译:二维成核理论研究掺杂杂质对SiC PVT生长过程中多晶型稳定性的影响
机译:物理气相传输法分析SiC多晶型生长的热力学
机译:PVT法氮掺杂对6H-SiC种子4H多型生长的影响
机译:用于溶液衍生薄膜中成核和生长的热力学和动力学模型。
机译:优化SiC粉末源材料以改善SiC圆棒的PVT生长过程中的工艺条件
机译:用竞争晶格模型monte Carlo模拟分析pVT生长碳化硅单晶的多型稳定性
机译:alN,GaN和选择的siC多型组合的假晶半导体异质结构:理论进展及其与成核,生长,表征和器件开发实验研究的协调