机译:HVPE对高质量GaN晶体的生长和应变表征
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 1-23-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan;
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 1-23-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan;
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 1-23-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan;
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 1-23-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan;
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 Japan;
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 1-23-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan;
A1. stresses; A 3. hydride vapor phase epitaxy; B1.gan;
机译:具有受控电性能的高质量高质量HVPE-GaN晶体的生长
机译:在HVPE模板种子上进行高质量GaN晶体的氨热生长
机译:通过HVPE生长比较在MOCVD-GaN / Al_2O_3和MOCVD-GaN / SiC样品上生长的GaN薄膜的应变
机译:HVPE-GaN在单热GaN晶体上的生长
机译:高品质散装六边形氮化物晶体的生长和表征
机译:HVPE生长的GaN晶体中的应力对MOCVD-GaN / 6H-SiC衬底的影响
机译:通过HVPE在新型纳米多孔模板上生长的高质量自分离GaN晶体