HVPE-GaN growth on ammonothermal GaN crystals

摘要

HVPE crystallization on ammonothermaly grown GaN crystals (A-GaN) is described. Preparation of the (0001) surface of the A-GaN crystals to the epi-ready state is presented. The HVPE initial growth conditions are determined and demonstrated. An influence of a thickness and a free carrier concentration in the initial substrate on quality and mode of growth by the HVPE is examined. Smooth GaN layers of excellent crystalline quality, without cracks, and with low dislocation density are obtained.