机译:固体源分子束外延生长Si(001)衬底上高度均匀的Ge量子点的光学和结构研究
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Ngatsuta-cho, Midori-ku, Yokohama 226-8502, Japan;
Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;
Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;
Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;
Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Ngatsuta-cho, Midori-ku, Yokohama 226-8502, Japan,Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;
A1. Low-dimensional structure; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting germanium;
机译:在InP(001)上生长的低密度InAs量子点,使用固体源分子束外延和生长后退火工艺
机译:固态源分子束外延在InP(001)上生长的低密度InAs自组装量子点
机译:固体源分子束外延直接形成在InP(001)上生长的InAs量子点
机译:通过分子束外延在Si(001)上生长的自组装Ge(Si)量子点的光学性质
机译:通过分子束外延生长的光学器件的自组装量子点的微观结构和光学性质。
机译:通过分子束外延在非晶SiO2表面上生长的CuInSe2量子点
机译:固体源分子束外延直接形成在InP(001)上生长的InAs量子点